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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  VB30100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A | Vishay Siliconix | VISHAY | - | - | - | 169 Kb |
| 2. | VB30100C-E3/4W | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A | Vishay Siliconix | VISHAY | - | - | - | 169 Kb |
| 3. | VB30100C-E3/4W | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix | VISHAY | - | - | - | 167 Kb |
| 4. | VB30100C-E3/8W | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A | Vishay Siliconix | VISHAY | - | - | - | 169 Kb |
| 5. | VB30100C-E3/8W | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix | VISHAY | - | - | - | 167 Kb |
| 6. | VB30100S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A | Vishay Siliconix | VISHAY | - | - | - | 170 Kb |
| 7. | VB30100S | High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix | VISHAY | - | - | - | 153 Kb |
| 8. | VB30100S | High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix | VISHAY | - | - | - | 154 Kb |
| 9. | VB30100S-E3-4W | High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix | VISHAY | - | - | - | 153 Kb |
| 10. | VB30100S-E3-8W | High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix | VISHAY | - | - | - | 153 Kb |
| 11. | VB30100S-E3/4W | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A | Vishay Siliconix | VISHAY | - | - | - | 170 Kb |
| 12. | VB30100S-E3/4W | High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix | VISHAY | - | - | - | 154 Kb |
| 13. | VB30100S-E3/8W | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A | Vishay Siliconix | VISHAY | - | - | - | 170 Kb |
| 14. | VB30100S-E3/8W | High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix | VISHAY | - | - | - | 154 Kb |
| 15. | VB30100SG | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A | Vishay Siliconix | VISHAY | - | - | - | 171 Kb |
| 16. | VB30100SG-E3/4W | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A | Vishay Siliconix | VISHAY | - | - | - | 171 Kb |
| 17. | VB30100SG-E3/8W | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A | Vishay Siliconix | VISHAY | - | - | - | 171 Kb |
| 18. | EVB3011 | 1 GHz Quadrature Modulator | Agere Systems | AGERE | - | - | - | 194 Kb |
| 19. | VB30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A | Vishay Siliconix | VISHAY | - | - | - | 170 Kb |
| 20. | VB30120C-E3/4W | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A | Vishay Siliconix | VISHAY | - | - | - | 170 Kb |
