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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  STP90NF03L | N-channel 30V - 0.0056Y -90A TO-220/I2PAK Low gate charge STripFET Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 229 Kb |
| 2. | STP90N4F3 | N-channel 40V - 5.4mY - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 330 Kb |
| 3. | STP90N4F3 | N-channel 40 V, 5.0 mY, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET III Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 789 Kb |
| 4. | STP90N4F3 | N-channel 40 V, 5.4 mY, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 415 Kb |
| 5. | STP90NF03L | N-channel 30V - 0.0056Y -90A TO-220/I2PAK Low gate charge STripFET Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 229 Kb |
| 6. | STP90NF03L_05 | N-channel 30V - 0.0056Y -90A TO-220/I2PAK Low gate charge STripFET Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 229 Kb |
| 7. | STP90NS04ZC | N-channel clamped 5mY - 80A TO-220 Fully protected SAFeFET Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 314 Kb |
| 8. | STP9235 | STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. | Stanson Technology | STANSON | - | - | - | 323 Kb |
| 9. | STP9434 | STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. | Stanson Technology | STANSON | - | - | - | 307 Kb |
| 10. | STP9435 | P Channel Enhancement Mode MOSFET | Stanson Technology | STANSON | - | - | - | 381 Kb |
| 11. | STP9435S8RG | P Channel Enhancement Mode MOSFET | Stanson Technology | STANSON | - | - | - | 381 Kb |
| 12. | STP9435S8TG | P Channel Enhancement Mode MOSFET | Stanson Technology | STANSON | - | - | - | 381 Kb |
| 13. | STP9437 | STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. | Stanson Technology | STANSON | - | - | - | 368 Kb |
| 14. | STP9527 | STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. | Stanson Technology | STANSON | - | - | - | 926 Kb |
| 15. | STP9547 | P Channel Enhancement Mode MOSFET | Stanson Technology | STANSON | - | - | - | 379 Kb |
| 16. | STP9547S8RG | P Channel Enhancement Mode MOSFET | Stanson Technology | STANSON | - | - | - | 379 Kb |
| 17. | STP9547S8TG | P Channel Enhancement Mode MOSFET | Stanson Technology | STANSON | - | - | - | 379 Kb |
| 18. | STP95N04 | N-CHANNEL 40V - 5.4mohm - 80A - DPAK - TO-220 STripFET Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 280 Kb |
| 19. | STP95N2LH5 | N-channel 25 V, 0.0038 Y, 80 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 590 Kb |
| 20. | STP95N4F3 | N-channel 40 V, 5.0 mY, 80 A, DPAK, TO-220 STripFET III Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 746 Kb |
| 21. | STP95N4F3 | N-channel 40V - 5.4mY - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET | STMicroelectronics | STMICROELECTRONICS | - | - | - | 449 Kb |
