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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
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10n10 datasheet
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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
ChipManuals is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 17 Displaying: 1 - 10# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 1. | IXFH10N100 | 1000V HiPerFET power MOSFET | IXYS | TO-247 | 3 | -55°C | 150°C | 232K | 2. | IXFH10N100 | 1000V HiPerFET power MOSFET | IXYS | TO-247 | 3 | -55°C | 150°C | 232K | 3. | IXFM10N100 | 1000V HiPerFET power MOSFET | IXYS | TO-204 | 4 | -55°C | 150°C | 232K | 4. | MTP10N10E | TMOS IV power field effect transistor | MOT | - | 4 | -65°C | 150°C | 237K | 5. | MTP10N10EL | Logic level TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 221K | 6. | MTV10N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 269K | 7. | MTW10N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | MOT | TO-247AE | 4 | -55°C | 150°C | 192K | 8. | MTY10N100E | TMOS E-FET power field effect transistor | MOT | TO-264 | 3 | -55°C | 150°C | 228K | 9. | OM10N100NK | N-channel size 6 MOSFET, high energy capability | OMNI | TO-3 | 2 | -55°C | 125°C | 29K | 10. | PHD10N10E | PowerMOS transistor | PHLPS | SOT428 | - | - | - | 76K |
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