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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | MGW12N120 | Insulated Gate Bipolar Transistor | Motorola, Inc | MOTOROLA | - | - | - | 235 Kb |
2. | SGB02N120 | Fast IGBT in NPT-technology Lower Eoff compared to previous generation | Infineon Technologies AG | INFINEON | - | - | - | 430 Kb |
3. | SGB02N120 | Fast S-IGBT in NPT-technology | Infineon Technologies AG | INFINEON | - | - | - | 400 Kb |
4. | SGD02N120 | Fast S-IGBT in NPT-technology | Infineon Technologies AG | INFINEON | - | - | - | 400 Kb |
5. | SGD02N120 | Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation | Infineon Technologies AG | INFINEON | - | - | - | 384 Kb |
6. | SGI02N120 | Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation | Infineon Technologies AG | INFINEON | - | - | - | 384 Kb |
7. | SGP02N120 | Fast S-IGBT in NPT-technology | Infineon Technologies AG | INFINEON | - | - | - | 400 Kb |
8. | SGP02N120 | Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation | Infineon Technologies AG | INFINEON | - | - | - | 384 Kb |
9. | SGW02N120 | Fast IGBT in NPT-technology | Infineon Technologies AG | INFINEON | - | - | - | 306 Kb |
10. | SGW02N120 | Fast IGBT in NPT-technology | Infineon Technologies AG | INFINEON | - | - | - | 814 Kb |
11. | SKB02N120 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | INFINEON | - | - | - | 1.12 Mb |
12. | SKB02N120 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | INFINEON | - | - | - | 417 Kb |
13. | SKP02N120 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | Infineon Technologies AG | INFINEON | - | - | - | 417 Kb |
14. | MGW12N120 | Insulated Gate Bipolar Transistor | ON Semiconductor | ONSEMI | - | - | - | 142 Kb |
15. | IXFH12N120 | High Voltage HiPerFET Power MOSFET | IXYS Corporation | IXYS | - | - | - | 88 Kb |
16. | IXFN22N120 | HiPerFET Power MOSFETs | IXYS Corporation | IXYS | - | - | - | 114 Kb |
17. | IXFN32N120 | HiPerFET Power MOSFETs | IXYS Corporation | IXYS | - | - | - | 568 Kb |
18. | IXTH12N120 | Power MOSFET, Avalanche Rated High Voltage | IXYS Corporation | IXYS | - | - | - | 545 Kb |
19. | FM27C512N120 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | Fairchild Semiconductor | FAIRCHILD | - | - | - | 107 Kb |
20. | NM27C512N120 | 524,288-Bit (64K x 8) High Performance CMOS EPROM | National Semiconductor | NSC | - | - | - | 166 Kb |