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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. |  TC80 | Axial Leaded Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | CDE | - | - | - | 138 Kb |
| 2. | TC80 | Axial Leaded Aluminum Electrolytic Capacitors | Cornell Dubilier Electronics | CDE | - | - | - | 138 Kb |
| 3. | GE28F160C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | INTEL | - | - | - | 712 Kb |
| 4. | GE28F640C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | INTEL | - | - | - | 712 Kb |
| 5. | RC28F160C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | INTEL | - | - | - | 712 Kb |
| 6. | RC28F640C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | INTEL | - | - | - | 712 Kb |
| 7. | TE28F160C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | INTEL | - | - | - | 712 Kb |
| 8. | TE28F160B3TC80 | 3 Volt Advanced Boot Block Flash Memory | Intel Corporation | INTEL | - | - | - | 359 Kb |
| 9. | TE28F640C3TC80 | Advanced Boot Block Flash Memory (C3) | Intel Corporation | INTEL | - | - | - | 712 Kb |
| 10. | GE28F160B3TC80 | 3 Volt Advanced Boot Block Flash Memory | Intel Corporation | INTEL | - | - | - | 359 Kb |
| 11. | GT28F128W18TC80 | Intel^ Wireless Flash Memory | Intel Corporation | INTEL | - | - | - | 1.09 Mb |
| 12. | GT28F320W18TC80 | Intel^ Wireless Flash Memory | Intel Corporation | INTEL | - | - | - | 1.09 Mb |
| 13. | GE28F128W18TC80 | Intel^ Wireless Flash Memory | Intel Corporation | INTEL | - | - | - | 1.09 Mb |
| 14. | GE28F320W18TC80 | Intel^ Wireless Flash Memory | Intel Corporation | INTEL | - | - | - | 1.09 Mb |
| 15. | K4S161622H-TC80 | 16Mb H-die SDRAM Specification | Samsung semiconductor | SAMSUNG | - | - | - | 116 Kb |
| 16. | K4S161622E-TC80 | 1M x 16 SDRAM | Samsung semiconductor | SAMSUNG | - | - | - | 708 Kb |
| 17. | K4S280832B-TC80 | 4M x 8Bit x 4 Banks Sychronous DRAM | Samsung semiconductor | SAMSUNG | - | - | - | 131 Kb |
| 18. | K4S281632M-TC80 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 93 Kb |
| 19. | K4S643232C-TC80 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 787 Kb |
| 20. | GE28F640W18TC80 | Intel^ Wireless Flash Memory | Intel Corporation | INTEL | - | - | - | 1.09 Mb |
| 21. | K4S281632B-TC80 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor | SAMSUNG | - | - | - | 118 Kb |
