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GT10J312 Datasheet

 Datasheet for
Description:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Manufacturer:Toshiba Semiconductor
Temp. range:Min: - | Max: -
Package:Not available...
Pins:Not available...
Link: GT10J312.PDF (293 Kb)


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GT10J312.PDF

GT10J312 datasheet: N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) GT10J312

Datasheet


RELEVANT RESULTS FOR GT10J312 DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet GT10J301N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Toshiba Semiconductor
TOSHIBA
-
-
-
316 Kb
2.
Datasheet GT10J301_06HIGH POWER SWITCHING APPLICATIONS
Toshiba Semiconductor
TOSHIBA
-
-
-
495 Kb
3.
Datasheet GT10J303N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Toshiba Semiconductor
TOSHIBA
-
-
-
288 Kb
4.
Datasheet GT10J303SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
Toshiba Semiconductor
TOSHIBA
-
-
-
475 Kb
5.
Datasheet GT10J303_06SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
Toshiba Semiconductor
TOSHIBA
-
-
-
475 Kb
6.
Datasheet GT10J311N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Toshiba Semiconductor
TOSHIBA
-
-
-
317 Kb
7.
Datasheet GT10J312N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Toshiba Semiconductor
TOSHIBA
-
-
-
293 Kb
8.
Datasheet GT10J312SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
Toshiba Semiconductor
TOSHIBA
-
-
-
511 Kb
9.
Datasheet GT10J312_06SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
Toshiba Semiconductor
TOSHIBA
-
-
-
511 Kb
10.
Datasheet GT10J321TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
Toshiba Semiconductor
TOSHIBA
-
-
-
164 Kb
11.
Datasheet GT10J321Silicon N Channel IGBT High Power Switching Applications
Toshiba Semiconductor
TOSHIBA
-
-
-
206 Kb
12.
Datasheet GT10J321_06Silicon N Channel IGBT High Power Switching Applications
Toshiba Semiconductor
TOSHIBA
-
-
-
206 Kb

 
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