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EEV-TG2A101M Datasheet

 Datasheet for
Description:90W GaN WIDE-BAND POWER AMPLIFIER
Manufacturer:RF Micro Devices
Temp. range:Min: - | Max: -
Package:Not available...
Pins:Not available...
Link: EEV-TG2A101M.PDF (1.88 Mb)


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EEV-TG2A101M.PDF

EEV-TG2A101M datasheet: 90W GaN WIDE-BAND POWER AMPLIFIER EEV-TG2A101M

Datasheet


RELEVANT RESULTS FOR EEV-TG2A101M DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet SQ3418EEV-T1-GE3Automotive N-Channel 40 V (D-S) 175 `C MOSFET
Vishay Siliconix
VISHAY
-
-
-
222 Kb
2.
Datasheet SQ3419EEV-T1-GE3Automotive P-Channel 40 V (D-S) 175 `C MOSFET
Vishay Siliconix
VISHAY
-
-
-
220 Kb
3.
Datasheet SQ3426EEV-T1-GE3Automotive N-Channel 60 V (D-S) 175 `C MOSFET
Vishay Siliconix
VISHAY
-
-
-
219 Kb
4.
Datasheet SQ3427EEV-T1-GE3Automotive P-Channel 60 V (D-S) 175 `C MOSFET
Vishay Siliconix
VISHAY
-
-
-
219 Kb
5.
Datasheet EEV-TG2A101M60W GaN WIDEBAND POWER AMPLIFIER
RF Micro Devices
RFMD
-
-
-
1.80 Mb
6.
Datasheet EEV-TG2A101M90W GaN WIDE-BAND POWER AMPLIFIER
RF Micro Devices
RFMD
-
-
-
1.88 Mb
7.
Datasheet EEV-TG2A101M120W GaN WIDEBAND POWER AMPLIFIER
RF Micro Devices
RFMD
-
-
-
1.63 Mb

 
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