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RELEVANT RESULTS FOR RF5110G DATASHEET# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 1. | IRF511 | N-Channel Enhancement-Mode Vertical DMOS Power FETs | Supertex, Inc | SUTEX | - | - | - | 74 Kb | 2. | IRF511 | 4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs | Harris Corporation | HARRIS | - | - | - | 76 Kb | 3. | IRF511 | N-Channel Power MOSFETs, 5.5 A, 60-100V | Fairchild Semiconductor | FAIRCHILD | - | - | - | 157 Kb | 4. | RF5110 | 3V GSM POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 176 Kb | 5. | RF5110 | 3V GSM POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 287 Kb | 6. | RF5110G | 3V GSM POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 246 Kb | 7. | RF5110G | 3V GSM POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 847 Kb | 8. | RF5110GPCBA-410 | 3V GSM POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 847 Kb | 9. | RF5110GPCBA-410 | 3V GSM POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 246 Kb | 10. | RF5110GTR7 | 3V GSM POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 847 Kb | 11. | RF5110G_07 | 3V GSM POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 847 Kb | 12. | RF5110PCBA | 3V GSM POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 176 Kb | 13. | RF5110PCBA | 3V GSM POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 287 Kb | 14. | RF5110_1 | 3V GSM POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 287 Kb | 15. | RF5111 | 3V DCS POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 179 Kb | 16. | RF5111 | 3V DCS POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 320 Kb | 17. | RF5111PCBA-41X | 3V DCS POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 179 Kb | 18. | RF5111PCBA-41X | 3V DCS POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 320 Kb | 19. | RF5111_1 | 3V DCS POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 320 Kb | 20. | RF5117 | 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER | RF Micro Devices | RFMD | - | - | - | 284 Kb |
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