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PTFB212503FL Datasheet

 Datasheet for
Description:Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz
Manufacturer:Infineon Technologies AG
Temp. range:Min: - | Max: -
Package:Not available...
Pins:Not available...
Link: PTFB212503FL.PDF (518 Kb)


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PTFB212503FL.PDF

PTFB212503FL datasheet: Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz PTFB212503FL

Datasheet


RELEVANT RESULTS FOR PTFB212503FL DATASHEET

#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
Datasheet PTFB211501EThermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 2170 MHz
Infineon Technologies AG
INFINEON
-
-
-
356 Kb
2.
Datasheet PTFB211503FLThermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 2170 MHz
Infineon Technologies AG
INFINEON
-
-
-
514 Kb
3.
Datasheet PTFB212503ELThermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz
Infineon Technologies AG
INFINEON
-
-
-
518 Kb
4.
Datasheet PTFB212503FLThermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz
Infineon Technologies AG
INFINEON
-
-
-
518 Kb
5.
Datasheet PTFB213004FHigh Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz
Infineon Technologies AG
INFINEON
-
-
-
474 Kb
6.
Datasheet PTFB241402FHigh Power RF LDMOS Field Effect Transistor 140 W, 2300 2400 MHz
Infineon Technologies AG
INFINEON
-
-
-
470 Kb

 
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